High-power, high-efficiency VCSELs pursue the goal

Photonics Spectra

Volumn 39, Issue 2, 2005, Pages

  D'Asaro, L Arthur ^a   Seurin, Jean Francois ^a   Wynn, James D ^a  

^a Princeton Optronics Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHIP-ON-SUBMOUNT DESIGN; N DOPED SUBSTRATE MATERIAL; THERMAL SIMULATIONS; VERTICAL CAVITY SURFACE EMITTING LASERS (VCSELS);

HEAT RESISTANCE; HEAT TRANSFER; HIGH POWER LASERS; LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SPECTRUM ANALYSIS; TEMPERATURE CONTROL; THERMODYNAMIC PROPERTIES;

SEMICONDUCTOR LASERS;

EID: 15744392958     PISSN: 07311230     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (3)

1. 1-x As/GaAs mirrors for vertical-cavity surface-emitting lasers. JOURNAL OF VACCUM SCIENCE AND TECHNOLOGY B, pp. 3075-3083.
2. M. Miller et al (2000). Large-area high-power VCSEL. Proc. IEEE 17th International Semiconductor Laser Conference, pp. 63-64.
3. A. Mooradian (2001). High brightness cavity-controlled surface emitting GaInAs lasers operating at 980 nm. Proc. Optical Fiber Communication Conference 2001, Vol. 4, PD17-1-3.