Vertical-cavity surface-emitting lasers with lateral carrier confinement

Electronics Letters

Volumn 43, Issue 3, 2007, Pages 163-164

  Lofgreen, D D ^a   Chang, Y C ^a   Coldren, L A ^a  

^a Santa Barbara   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRIC CURRENT CONTROL; HETEROJUNCTIONS; SEMICONDUCTOR QUANTUM WELLS;

CARRIER CONFINEMENT; HETEROBARRIERS; QUANTUM WELL INTERMIXING; THRESHOLD CURRENTS;

SURFACE EMITTING LASERS;

EID: 34248382156     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20073844     Document Type: Article

References (7)

1. Miller, D.A.B.: ' Physical reasons for optical interconnection ', Int. J. Optoelectron., 1997, 11, p. 155-168 0952-5432
2. Hegblom, E.R., Babic, D.I., Thibeault, B.J., and Coldren, L.A.: ' Scattering losses from dielectric apertures in vertical-cavity lasers ', IEEE J. Sel. Top. Quantum Electron., 1997, 3, p. 379-389 10.1109/2944.605682 1077-260X
3. Hegblom, E.R., Margalit, N.M., Thibeault, B.J., Coldren, L.A., and Bowers, J.E.: ' Current spreading in apertured vertical cavity lasers ', Proc. SPIE Photonics West, 1997, p. 176-180
4. Naone, R.L., Floyd, P.D., Young, D.B., Hegblom, E.R., Strand, T.A., and Coldren, L.A.: ' Interdiffused quantum wells for lateral carrier confinement in VCSEL's ', IEEE J. Sel. Top. Quantum Electron., 1998, 4, p. 706-714 10.1109/2944.720483 1077-260X
5. Deppe, D.G., and Holonyak Jr., N.: ' Atom diffusion and impurity-induced layer disordering in quantum well III-V semiconductor heterostructures ', J. Appl. Phys., 1988, 64, p. 93-113 10.1063/1.341981 0021-8979
6. 1-xAs-GaAs lasers defined by defect diffusion ', Appl. Phys. Lett., 1986, 49, p. 510-512 10.1063/1.97133 0003-6951
7. + ions with gallium arsenide ', J. Vac. Sci. Technol. A, 1993, 11, p. 1242-1247 10.1116/1.578499