Development of cross-hatch grid morphology and its effect on ordering growth of quantum dots

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 25, Issue 4, 2005, Pages 592-596

  Zhang, C L ^a   Xu, B ^a   Wang, Z G ^a   Jin, P ^a   Zhao, F A ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

A1. Nanostructures; A1. Stress; A1. Surface structure; A3. Molecular beam epitaxy; B2. Semiconducting III V materials

Indexed keywords

DISLOCATIONS (CRYSTALS); INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; MORPHOLOGY; NANOSTRUCTURED MATERIALS; PARALLEL PROCESSING SYSTEMS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SURFACE STRUCTURE; ULTRATHIN FILMS;

PARALLEL COMPUTING ARCHITECTURES; SEMICONDUCTING III-V MATERIALS; SINGLE-ELECTRON TRANSISTORS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 10144260672     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2004.09.008     Document Type: Article

References (13)

1. C.K. Hahn, Y.J. Park, E.K. Kim, et al., Appl. Phys. Lett. 73 (1998) 2479.
2. R. Nötzel, J. Menniger, M. Ramsteiner, et al., Appl. Phys. Lett. 68 (1996) 1132.
3. J. Liang, H. Chik, A. Yin, J. Xu, J. Appl. Phys. 91 (2002) 2544.
4. A.M. Andrews, J.S. Speck, A.E. Romanov, et al., J. Appl. Phys. 91 (2002) 1933.
5. R. Leon, S. Chaparro, S.R. Johnson, et al., J. Appl. Phys. 91 (2002) 5826.
6. F. Hiwatashi, K. Yamaguchi, Appl. Surf. Sci. 130-132 (1998) 737.
7. R. Beanland, M. Aindow, T.B. Joyce, et al., J. Crystal Growth 149 (1995) 1.
8. C. Frigeri, A. Brinciotti, D.M. Ritchie, Cryst. Res. Technol. 33 (1998) 375.
9. S.J. Barnett, A.M. Keir, A.D. Johnson, et al., J. Phys. D 28 (1995) A17.
10. J.W. Matthews, A.E. Blankeslee, S. Mader, Thin Solid Films 33 (1976) 253.
11. D.J. Dunstan, P. Kidd, R. Beanland, et al., Mater. Sci. Technol. 12 (1996) 181.
12. H. Toyoshima, T. Niwa, J. Yamazaki, A. Okamoto, Appl. Phys. Lett. 63 (1993) 821.
13. K.M. Kim, Y.J. Park, S.H. Son, et al., Physica E 24 (2004) 148.