Influence of dislocation stress field on distribution of quantum dots

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 33, Issue 1, 2006, Pages 130-133

  Zhang, Chunling ^a,c   Tang, Lei ^b   Wang, Yuanli ^c   Wang, Zhanguo ^c   Xu, Bo ^c  

^a NANKAI UNIVERSITY   (China)

^b MEDICAL COLLEGE OF CHINESE PEOPLE'S ARMED POLICE FORCES   (China)

^c INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

A1.Stress; A1.Surface structure; B2.semiconducting III V materials

Indexed keywords

DISLOCATIONS (CRYSTALS); MOLECULAR BEAM EPITAXY; STRESSES; SURFACE STRUCTURE; TENSILE STRESS; TRANSMISSION ELECTRON MICROSCOPY;

DISLOCATION STRESS; INTERFACE MISFIT DISLOCATIONS; SEMICONDUCTING III-V MATERIALS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33747081390     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2005.12.169     Document Type: Article

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