Alignment of InAs quantum dots on a controllable strain-relaxed substrate using an InAs/GaAs superlattice

Journal of Applied Physics

Volumn 92, Issue 9, 2002, Pages 5453-5456

  Kim, Kwang Moo ^a   Park, Young Ju ^a   Park, Young Min ^a   Hyon, Chan Kyeong ^a   Kim, Eun Kyu ^b   Park, Jung Ho ^c  

^a Korea Institute of Science and Technology   (South Korea)

^b Hanyang University   (South Korea)

^c Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER TRANSITIONS; DISLOCATION NETWORKS; GAAS; GAAS(001); INAS QUANTUM DOTS; INAS SELF-ASSEMBLED QUANTUM DOTS; INAS/GAAS; QUANTUM DEVICE; SPACER LAYER; STRAIN-RELAXED; STRAINED LAYERS; TWO-DIMENSIONAL ARRAYS;

ALIGNMENT; GALLIUM ARSENIDE; INDIUM ARSENIDE; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM; SUPERLATTICES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 18744391178     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1511821     Document Type: Article

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