Strain-induced surface morphology of slightly mismatched InxGa1-xAs films grown on vicinal (100) InP substrates

Journal of Applied Physics

Volumn 85, Issue 10, 1999, Pages 7185-7190

  Dumont, H ^a   Auvray, L ^a   Dazord, J ^a   Souliere, V ^a   Monteil, Y ^a   Bouix, J ^a  

^a UNIVERSITÉ CLAUDE BERNARD LYON 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPRESSIVE STRESS; DISLOCATIONS (CRYSTALS); FILM GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; STRAIN; SURFACE STRUCTURE; TENSILE STRESS;

LATTICE MISMATCH;

SEMICONDUCTING FILMS;

EID: 0032619854     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370530     Document Type: Article

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