Polarization-transmissive photovoltaic film device consisting of an Si photodiode wire-grid

Journal of Optics A: Pure and Applied Optics

Volumn 10, Issue 4, 2008, Pages

  Hirose, Kenichiro ^a   Mita, Yoshio ^a   Imai, Yoshiaki ^a   Marty, Freédéric ^b   Bourouina, Tarik ^b   Asada, Kunihiro ^a   Sakai, Shuichi ^a   Kawazoe, Tadashi ^a   Ohtsu, Motoichi ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b Ecole Superieure d'Ingenieurs en   (France)

Author keywords

DRIE; Energy scavenging; High aspect ratio nano structure; Photovoltaic cell; Polarization

Indexed keywords

ASPECT RATIO; LIGHT EXTINCTION; LIGHT POLARIZATION; NANOWIRES; PHOTODIODES;

ENERGY SCAVENGING; HIGH ASPECT RATIO NANO STRUCTURES; INCIDENT LIGHT; PHOTOVOLTAIC FILM DEVICES;

PHOTOVOLTAIC CELLS;

EID: 43049105421     PISSN: 14644258     EISSN: 17413567     Source Type: Journal    
DOI: 10.1088/1464-4258/10/4/044014     Document Type: Article

References (15)

1. Tonooka K, Bando H and Aiura Y 2003 Photovoltaic effect observed in transparent p-n heterojunctions based on oxide semiconductors Thin Solid Films 445 327-31
2. Auton J P 1967 Infrared transmission polarizers by photolithography Appl. Opt. 6 1023-7
3. Yeh P 1978 A new optical model for wire grid polarizers Opt. Commun. 26 S68-76
4. Lärmer F and Schilp A (R Bosch GmbH) 1996 Method for anisotropic plasma etching of substrate US Patent Specification 5501893 EP Patent Specification 625285
5. Marty F, Rousseau L, Saadany B, Mercier B, Francais O, Mita Y and Bourouina T 2005 Advanced etching of silicon based on deep reactive ion etching for silicon high aspect ratio microstructures and three-dimensional micro- and nanostructures Microelectron. J. 36 673-7
6. Shaw Kevin A, Lisa Zhang Z and MacDonald Noel C 1994 SCREAM I: a single mask, single-crystal silicon, reactive ion etching process for microelectromechanical structures Sensors Actuators A 40 63-70
7. Sarajilić E, deBoer M J, Jansen H V, Arnal N, Puech M, Kfijnen G and Elwenspoek M 2004 Advanced plasma processing combined with trench isolation technology for fabrication and fast prototyping of high aspect ratio MEMS in standard silicon wafers J. Micromech. Microeng. 14 S70-5
8. Harada T, Ito K, Shibata T and Mita Y 2006 A bulk knife-edge as-deposition self-patterning structure for Greek-cross and organic thin film transistors ICMTS 2006: IEEE Int. Conf. on Microelectronic Test Structures (March 2006) pp 149-54
9. Hirose K, Shiraishi F and Mita Y 2007 A simultaneous vertical and horizontal self-patterning method for deep three-dimensional microstructures J. Micromech. Microeng. 17 S68-76
10. Lee Y I, Park K H, Lee J, Lee C S, Yoo H,J, Kim C J and Yoon Y S 1997 Dry release for surface micromachining with HF vapor-phase etching J. Microelectromech. Syst. 6 226-33
11. Mita Y, Kubota M, Harada T, Marty F, Saadany B, Bourouina T and Shibata T 2006 Contour lithography methods for DRIE fabrication of nanometre-millimetre- scale coexisting microsystems J. Micromech. Microeng. 16 S135-41
12. Jansen H, deBoer M, Wiegernik R, Tas N, Smulders E, Neagu C and Elwenspoek M 1997 RIE lag in high aspect ratio trench etching of silicon Microelectron. Eng. 35 45-50
13. Melchior H 1972 Demodulation and photodetection techniques Laser Handbook vol 1 ed F T Arecchi and E O Schulz Dubois (Amsterdam: North-Holland)
14. Mita Y, Sugiyama M, Kubota M, Marty F, Bourouina T and Shibata T 2006 Aspect ratio dependent scalloping attenuation in DRIE and an application to low-loss fiber-optical switches MEMS 2006: IEEE Int. Conf. on Micro Electro Mechanical Systems (January 2006) pp 114-7
15. de Boer M J, Gardeniers J G E, Jansen H V, Smulders E, Gilde M J, Roelofs G, Sasserath J N and Elwenspoek M 2002 Guidelines for etching silicon MEMS structures using fluorine high density plasmas at cryogenic temperatures J. Microelectromech. Syst. 11 385-401