Kinetic model for degradation of light-emitting diodes

IEEE Journal of Quantum Electronics

Volumn 33, Issue 6, 1997, Pages 970-979

  Chuang, Shun Lien ^{a,b,c,d,e,f,g,h,i,j,k}   Ishibashi, Akira ^a,b,c,k,l   Kijima, Satoru ^c,m   Nakayama, Norikazu ^c,n   Ukita, Masakazu ^c,l,o   Taniguchi, Satoshi ^c,p  

^a IEEE   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^c SONY CORPORATION   (Japan)

^d NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^e MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^f United States of America   (United States)

^g LUCENT TECHNOLOGIES   (United States)

^h Belkore and Polaroid   (United States)

ⁱ OPTICAL SOCIETY OF AMERICA   (United States)

^j AMERICAN PHYSICAL SOCIETY   (United States)

^k UNIVERSITY OF TOKYO   (Japan)

^l University of Tokyo ^*

^m TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

ⁿ UNIVERSITY OF TOYAMA   (Japan)

^o KEIO UNIVERSITY   (Japan)

^p KYOTO UNIVERSITY   (Japan)

more..

Author keywords

Light emitting diodes; Quantum well devices; Semiconductor lasers

Indexed keywords

AGING OF MATERIALS; DEGRADATION; QUANTUM EFFICIENCY; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS;

KINETIC MODELS; OPTICAL OUTPUT DEGRADATION;

LIGHT EMITTING DIODES;

EID: 0031163481     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.585485     Document Type: Article

References (43)

1. M. A. Haase, J. Qiu, J. M. DePuydt, and H. Cheng, "Blue-green laser diodes," Appl. Phys. Lett., vol. 59, pp. 1272-1274, 1991.
2. H. Jeon, J. Ding, W. Patterson, A. V. Nurmikko, X. Xie, D. C. Grillo, M. Kobayashi, and R. L. Gunshor, "Blue-green injection laser diodes in (Zn,Cd)Se/ZnSe quantum wells," Appl. Phys. Lett., vol. 59, pp. 3619-3621, 1991.
3. H. Okuyama, T. Miyajima, Y. Morinaga, F. Hiei, M. Ozawa, and K. Akimoto, "ZnSe/ZnMgSSe blue laser diode," Electron. Lett., vol. 28, pp. 1798-1799, 1992.
4. S. Nakamura, M. M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, and Y. Sugimoto, "InGaN-based multi-quantum-well-structure laser diodes," Jpn. J. Appl. Phys., vol. 35, 1996.
5. I. Akasaki, S. Sota, H. Sakai, T. Tanaka, M. Koike, and H. Amano, "Shortest wavelength semiconductor laser diode," Electron. Lett., vol. 32, pp. 1105-1106, 1996.
6. A. V. Nurmikko and R. L. Gunshor, "Semiconductor lasers with wide-gap II-VI materials," in Semiconductor Lasers: Past, Present, and Future. Woodbury, NY: Amer. Inst. Phys., 1995, ch. 7, pp. 208-242.
7. R. L. Gunshor and A. V. Nurmikko, "The first compact blue/green diode lasers-wide-bandgap II-VI semiconductors," Proc. IEEE, vol. 82, pp. 1503-1513, 1994.
8. A. Ishibashi, "II-VI blue-green laser diodes," IEEE J. Select. Topics Quantum Electron., vol. 1, pp. 741-748, 1995.
9. _, "II-VI blue-green light emitters," J. Cryst. Growth, vol. 159, pp. 555-565, 1996.
10. S. Taniguchi, T. Hino, S. Itoh, K. Nakano, N. Nakayama, A. Ishibashi, and M. Ikeda, "100h II-VI blue-green laser diode," Electron. Lett., vol. 32, pp. 552-553, 1996.
11. M. Fukuda, Reliability and Degradation of Semiconductor Lasers and LEDs. Boston: Artech, 1991.
12. S. Guha, J. M. DePuydt, M. A. Hasse, J Qiu, and H. Cheng, "Degradation of II-VI based blue-green light emitters," Appl. Phys. Lett., vol. 63, pp. 3107-3109, 1994.
13. S. Guha, H. Cheng, M. A. Hasse, J. M. DePuydt, J. Qiu, B. J. Wu, and G. E. Hofler, "(100) dark line defect in II-VI blue green light emitters," Appl. Phys. Lett., vol. 65, pp. 801-803, 1994.
14. G. C. Hua, N. Otsuka, D. C. Grillo, Y. Fan, J. Han, M. D. Ringle, R. L. Gunshor, M. Hovinen, and A. V. Nurmikko, "Microstructure study of a degraded pseudomorphic separate confinement heterostructure blue-green laser diode," Appl. Phys. Lett., vol. 65, pp. 1331-1333, 1994.
15. 1-y layers and the quality control of the ZnSe buffer/GaAs interface," J. Electron Mater., vol. 24, pp 155-161, 1995.
16. S. Tomiya, E. Morita, M. Ukita, H. Okuyama, S. Itoh, K. Nakano, and A. Ishibashi, "Structural study of defects induced during current injection to II-VI blue light emitter," Appl. Phys. Lett., vol. 66, pp. 1208-1210, 1995.
17. Y. L. Khait, J. Salzman, and R. Baserman, "Kinetic model for gradual degradation in semiconductor lasers and light-emitting diodes," Appl. Phys. Lett., vol. 53, pp. 2135-2137, 1988.
18. J. Salzman, Y. L. Khait, and R. Baserman, "Material evolution and gradual degradation in semiconductor lasers and light emitting diodes," Electron. Lett., vol. 25, pp. 244-246, 1989.
19. K. Kondo, O. Ueda, S. Isozumi, S. Yamakoshi, K. Akita, and T. Kotani, "Positive feedback model of defect formation in gradually degraded GaAlAs light emitting devices," IEEE Trans. Electron. Devices, vol. ED-30, pp. 321-326, 1983.
20. H. Imai, K. Isozumi, and M. Takusagawa, "Deep level assciated with slow degradation of GaAlAs DH laser diodes diodes," Appl. Phys. Lett., vol. 33, pp. 330-332, 1978.
21. T. Kobeyashi and Y. Furukawa, "Recombination enhanced annealing effect in AlGaAs/GaAs remote junction heterostructure lasers," IEEE J. Quantum Electron., vol. QE-15, pp. 674-684, 1979.
22. D. V. Lang and L. C. Kimerling, "Observation of recombination-enhanced defect reactions in semiconductors," Phys. Rev. Lett., vol. 33, pp. 489-492, 1974.
23. J. D. Weeks, J. C. Tully, and L. C. Kimerling, "Theory of recombination-enhanced defect reactions in semiconductors," Phys. Rev. B, vol. 12, pp. 3286-3292, 1975.
24. L. C. Kimerling, "Recombination-enhanced defect reactions," Solid State Electron., vol. 21, pp. 1391-1401, 1978.
25. A. Sibille, "Electronically stimulated deep-center reactions in electron-irradiated InP: Comparison between experiment and recombination-enhanced theories," Phys. Rev. B, vol. 35, pp. 3929-3936, 1987.
26. P. W. Hutchinson, P. S. Dobson, B. Wakefield, and S. O'Hara, "The generation of point defects in GaAs by electron-hole recombination at dislocations," Solid State Electron., vol. 21, pp. 1413-1417, 1978.
27. M. M. Sobolev, A. V. Gittsovich, M. I. Papentsev, I. V. Kochnev, and B. S. Yavich, "Degradation mechanism of GaAs/AlGaAs quantum well laser," Sov. Phys. Semicond., vol. 26, pp. 985-989, 1992.
28. C. H. Henry and D. V. Lang, "Nonradiative capture and recombination by multiphonon emission in GaAs and GaP," Phys. Rev. B, vol. 15, pp. 989-1015, 1977.
29. Y. Toyozawa, "Multiphonon recombination processes," Solid State Electron., vol. 21, pp. 1313-1318, 1978.
30. I. N. Yassievich, "Recombination-induced defect heating and related phenomena," Semicond. Sci. Technol., vol. 9, pp. 1433-1453, 1994.
31. B. Mroziewicz, M. Bugajski, and W. Nakwaski, Physics of Semiconductor Lasers. Amsterdam, The Netherlands: Elsevier, 1994.
32. S. L. Chuang, M. Ukita, S. Kijima, S. Taniguchi, and A. Ishibashi, "Optical output degradation of II-VI blue-green light-emitting diodes," in Conf. Lasers Electro-Optics. Tech. Dig. Ser., 1996, vol. 9, p. 455.
33. _, "Universal curves for optical power degradation of II-VI light-emitting diodes," Appl. Phys. Lett., vol. 69, pp. 1588-1590, 1996.
34. S. L. Chuang, Physics of Optoelectronic Devices. New York: Wiley, 1995.
35. M. Stutzmann, W. B. Jackson, and C. C. Tsai, "Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study," Phys. Rev. B, vol. 32, pp. 23-47, 1985.
36. S. Vignoli, R. Meaudre, and M. Meaudre, "Equilibrium temperature in intrinsic hydrogenated amorphous silicon under illumination," Phys. Rev. B, vol. 50, pp. 7378-7383, 1994.
37. R. A.Street, "Current-induced defect creation and recovery in hydrogenated amorphous silicon," Appl. Phys, Lett., vol. 59, pp. 1084-1086, 1991.
38. R. R. Drenten, K. W. Haberern, and J. M. Gaines, "Thermal characteristics of blue-green II-VI semiconductor lasers," J. Appl. Phys., vol. 76, pp. 3988-3993, 1994.
39. N. Nakayama, S. Itoh, A. Ishibashi, and Y. Mori, "High-efficiency ZnCdSe/ZnSSe/ZnMgSSe green and blue light-emitting diodes," in SPIE Meet., San Jose, CA, 1996.
40. R. W. Jansen and O. F. Sankey, "Theory of relative native- and impurity-defect abundances in compound semiconductors and the factors that influence them," Phys. Rev. B, vol. 39, pp. 3192-3206, 1989.
41. D. B. Laks, C. G. Van de Walle, G. F. Newmark, P. E. Blochl, and S. T. Pantelides, "Native defects and self-compensation in ZnSe," Phys. Rev. B, vol. 45, pp. 10965-10978, 1992.
42. C. G. Van de Walle and D. B. Laks, "Theory of defects, impurities, and doping in ZnSe," J. Lumin., vol. 52, pp. 1-8, 1992.
43. A. Garcia and J. E. Northrup, "Compensation of p-type doping in ZnSe: The role of impurity-native defect complexes," Phys. Rev. Lett., vol. 74, pp. 1131-11134, 1995.