Kinetic model for degradation of light-emitting diodes

IEEE Journal of Quantum Electronics

Volumn 33, Issue 6, 1997, Pages 970-979

  Chuang, Shun Lien ^{a,b,c,d,e,f,g,h,i,j,k}   Ishibashi, Akira ^a,c,h,k,l   Kijima, Satoru ^c,m   Nakayama, Norikazu ^c,n   Ukita, Masakazu ^c,l,o   Taniguchi, Satoshi ^c,p  

^a IEEE   (United States)

^b University of Illinois at Urbana Champaign   (United States)

^c SONY CORPORATION   (Japan)

^d NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^e MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^f LUCENT TECHNOLOGIES   (United States)

^g Belkore and Polaroid   (United States)

^h UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

ⁱ OPTICAL SOCIETY OF AMERICA   (United States)

^j AMERICAN PHYSICAL SOCIETY   (United States)

^k UNIVERSITY OF TOKYO   (Japan)

^l University of Tokyo ^*

^m TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

ⁿ UNIVERSITY OF TOYAMA   (Japan)

^o KEIO UNIVERSITY   (Japan)

^p KYOTO UNIVERSITY   (Japan)

more..

Author keywords

Light emitting diodes; Quantum well devices; Semiconductor lasers

Indexed keywords

AGING OF MATERIALS; DEGRADATION; QUANTUM EFFICIENCY; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS;

KINETIC MODELS; OPTICAL OUTPUT DEGRADATION;

LIGHT EMITTING DIODES;

EID: 0031163481     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.585485     Document Type: Article

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