The ageing mechanism of high-power InGaN/GaN light-emitting diodes under electrical stresses

Semiconductor Science and Technology

Volumn 22, Issue 12, 2007, Pages 1249-1252

  Hu, Jianzheng ^a   Yang, Lianqiao ^a   Kim, Lan ^a   Shin, Moo Whan ^a  

^a Myong Ji University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AGING OF MATERIALS; DEGRADATION; ELECTRON TUNNELING; STRESSES;

AGEING MECHANISMS; DOPANT ACTIVATION; ELECTRICAL STRESSES; OPTICAL DEGRADATIONS;

LIGHT EMITTING DIODES;

EID: 36448935694     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/12/001     Document Type: Article

References (11)

1. Nakamura S, Senoh M, Nagahama S, Iwasa N, Matsushita T and Mukai T 2000 Blue InGaN-based laser diodes with an emission wavelength of 450 nm Appl. Phys. Lett. 76 22-4
2. Nakamura S and Fasol G 1997 The Blue Laser Diode (Berlin: Springer)
3. 1-xN Appl. Phys. Lett. 79 2901-3
4. Narendran N and Gu Y 2005 Life of LED-based white light sources IEEE/OSA J. Disp. Technol. 1 167-71
5. Nakamura S 1998 The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes Science 281 956-61
6. Khait Y L, Saizman J and Beserman R 1988 Kinetic model for gradual degradation in semiconductor lasers and light-emitting diodes Appl. Phys. Lett. 53 2135-7
7. Yanagisawa T 1997 Estimation of the degradation of InGaN/GaN blue light-emitting diodes Microelectron. Reliab. 37 1239-41
8. Perlin P et al 1996 Low temperature study of current and electroluminescence in InGaN/AlGaN/GaN double-heterostructure blue light emitting diodes Appl. Phys. Lett. 69 1680-2
9. Milnes A G and Feucht D L 1973 Heterojunctions and Metal-Semiconductor Junctions (New York: Academic) p 42
10. Yanagisawa T and Kojima T 2003 Degradation of InGaN blue light-emitting diodes under continuous and low-speed pulse operations Microelectron. Reliab. 43 977-80
11. Chuang S-L, Ishibashi A, Kijima S, Nakayama N, Ukita M and Taniguchi S 1997 Kinetic model for degradation of light-emitting didoes IEEE J. Quantum Electron. 33 970-9