Non-volatile Al2O3 memory using an Al-rich structure as a charge-storing layer

Electronics Letters

Volumn 41, Issue 12, 2005, Pages 721-722

  Nakata, S ^a   Saito, K ^a,b   Shimada, M ^a  

^a NTT CORPORATION   (Japan)

^b NTT Afty ^*

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; CAPACITANCE; ELECTRIC POTENTIAL; ELECTRON CYCLOTRON RESONANCE; METAL INSULATOR TRANSITION; REFRACTIVE INDEX; SILICA; SPUTTERING; STOICHIOMETRY;

CHARGE-STORING LAYER; ELECTRON TRAP DENSITY; ELECTRON-CYCLOTRON-RESONANCE SPUTTERING; LOW-FREQUENCY REGIONS;

NONVOLATILE STORAGE;

EID: 21544470250     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20051419     Document Type: Article

References (7)

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