Critical layer thickness in Stranski-Krastanow growth of Ge on Si(0 0 1)

Surface Science

Volumn 562, Issue 1-3, 2004, Pages

  Varga, K ^a,b   Wang, L G ^b,c   Pantelides, S T ^b,d   Zhang, Zhenyu ^a,b  

^a UNIVERSITY OF TENNESSEE   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

^c NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^d VANDERBILT UNIVERSITY   (United States)

Author keywords

Density functional calculations; Epitaxy; Germanium; Growth; Silicon; Surface energy; Surface relaxation and reconstruction

Indexed keywords

BUCKLING; DIMERS; EPITAXIAL GROWTH; INTERFACIAL ENERGY; PROBABILITY DENSITY FUNCTION; SILICON;

CRITICAL LAYERS; DENSITY FUNCTIONAL CALCULATIONS; GROWTH; SURFACE RELAXATION AND RECONSTRUCTION;

GERMANIUM;

EID: 3142770649     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2004.06.149     Document Type: Article

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