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Volumn 87, Issue 15, 2001, Pages
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Facet growth under stress: The limits of strained-layer stability
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL ATOMIC STRUCTURE;
CRYSTAL ORIENTATION;
ELASTIC MODULI;
EPITAXIAL GROWTH;
NUMERICAL METHODS;
SEMICONDUCTOR GROWTH;
STRAIN RATE;
STRESSES;
SURFACE ROUGHNESS;
THERMODYNAMIC STABILITY;
ENERGY BARRIERS;
EQUILIBRIUM THERMODYNAMICS;
FACET GROWTH UNDER STRESS;
HETEROEPITAXIAL GROWTH;
STRAINED LAYER STABILITY;
SEMICONDUCTOR DEVICES;
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EID: 39249083862
PISSN: 00319007
EISSN: None
Source Type: Journal
DOI: None Document Type: Article |
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Times cited : (12)
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References (16)
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