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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 10, 2001, Pages 6152-6156

Oxidation properties of hydrogen-terminated Si(001) surfaces following use of a hyperthermal broad atomic oxygen beam at low temperatures

(5) Tagawa, Masahito a Yokota, Kumiko a Ohmae, Nobuo a Kinoshita, Hiroshi b Umeno, Masataka b

a KOBE UNIVERSITY (Japan)

b OSAKA UNIVERSITY (Japan)

Author keywords

Atomic oxygen; Beam oxidation; Energy accommodation; Low temperature oxidation; Neutral beam; Oxidation; Semiconductor process; Silicon; XPS

Indexed keywords

ATOMIC BEAMS; GROWTH (MATERIALS); HYDROGEN; LOW TEMPERATURE EFFECTS; MASS SPECTROMETRY; OXIDATION; SURFACES; THICKNESS MEASUREMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC OXYGEN; HYPERTHERMAL BROAD ATOMIC OXYGEN BEAM; PULSED SUPERSONIC VALVE;

SILICON;

EID: 0035484466 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.40.6152 Document Type: Article

Times cited : (24)

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