Controlling the properties of InGaAs quantum dots by selective-area epitaxy

Applied Physics Letters

Volumn 86, Issue 11, 2005, Pages 1-3

  Mokkapati, S ^a   Lever, P ^a   Tan, H H ^a   Jagadish, C ^a   McBean, K E ^b   Phillips, M R ^b  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b UNIVERSITY OF TECHNOLOGY SYDNEY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; BAND STRUCTURE; CATHODOLUMINESCENCE; EPITAXIAL GROWTH; INTEGRATED CIRCUITS; MASKS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

BANDGAP ENERGY CONTROL; MASK DIMENSIONS; PHOTONIC INTEGRATED CIRCUITS (PIC); SELECTIVE-AREA EPITAXY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 17944371240     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1875745     Document Type: Article

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