Oxygen-dependent phosphorus networking in ZnO thin films grown by low temperature rf sputtering

Journal of Applied Physics

Volumn 101, Issue 6, 2007, Pages

  Pugel, D Elizabeth ^a,c   Vispute, R D ^a   Hullavarad, S S ^a   Venkatesan, T ^a   Varughese, B ^b  

^a Bldg 142   (United States)

^b UNIVERSITY OF MARYLAND   (United States)

^c NASA GODDARD SPACE FLIGHT CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP BEHAVIOR; BOND NETWORKS; DEPOSITION TEMPERATURES; RADIO FREQUENCY (RF) SPUTTERED FILMS;

ENERGY GAP; FILM GROWTH; PHOSPHORUS; SPUTTERING; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

THIN FILMS;

EID: 34047177403     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2715551     Document Type: Article

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