Influence of gas flow ratio in PE-CVD process on mechanical properties of silicon nitride film

IEEJ Transactions on Electrical and Electronic Engineering

Volumn 3, Issue 3, 2008, Pages 281-289

  Oh, Hyun Jin ^a   Isono, Yoshitada ^a   Namazu, Takahiro ^b   Saito, Yoshihiro ^c   Yamaguchi, Akira ^c  

^a RITSUMEIKAN UNIVERSITY   (Japan)

^b UNIVERSITY OF HYOGO   (Japan)

^c SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

AFM tensile test; Atomic content ratio; Auger spectroscopy; Elastic properties; NH3 to SiH4 ratio; PE CVD; Silicon nitride

Indexed keywords

FLOW OF GASES; MECHANICAL PROPERTIES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON NITRIDE;

ATOMIC CONTENT RATIO; SILICON NITRIDE FILMS;

THICK FILMS;

EID: 42549102410     PISSN: 19314973     EISSN: 19314981     Source Type: Journal    
DOI: 10.1002/tee.20268     Document Type: Article

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