The linkage between macroscopic gettering mechanisms and electronic configuration of 3d-elements in p/p+ epitaxial silicon wafers

Applied Physics A: Materials Science and Processing

Volumn 74, Issue 1, 2002, Pages 35-39

  Holzl R ^a,b   Fabry, L ^b   Range, K J ^a  

^a UNIVERSITY OF REGENSBURG   (Germany)

^b SILTRONIC AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); CONTAMINATION; ELECTRONIC STRUCTURE; GETTERS; INDUCTIVELY COUPLED PLASMA; MASS SPECTROMETRY; SEGREGATION (METALLOGRAPHY); SOLUBILITY; STRATIGRAPHY;

CHEMICAL STRATIGRAPHY; EPITAXIAL WAFERS; GETTERING; METALLIC IMPURITIES;

SILICON WAFERS;

EID: 4243782759     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390100866     Document Type: Article

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