Semiconducting Ge-Si-Fe alloy grown on Si(100) substrate by reactive deposition epitaxy

Applied Physics Letters

Volumn 69, Issue 13, 1996, Pages 1912-1914

  Chen, H ^a   Han, P ^a   Huang, X D ^a   Hu, L Q ^a   Shi, Y ^a   Zheng, Y D ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; BAND STRUCTURE; ENERGY GAP; EPITAXIAL GROWTH; EVAPORATION; IRON ALLOYS; OPTICAL VARIABLES MEASUREMENT; THIN FILMS; VACUUM APPLICATIONS; X RAY CRYSTALLOGRAPHY;

GERMANIUM SILICON IRON ALLOYS; IRON DISILICIDE; OPTICAL TRANSMISSION MEASUREMENT; REACTIVE DEPOSITION EPITAXY;

SEMICONDUCTING GERMANIUM COMPOUNDS;

EID: 0030246326     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117619     Document Type: Article

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