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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 194, Issue 1, 2002, Pages 47-53

A comparative study on microstructures of β-FeSi2 and carbon-doped β-Fe(Si, C)2 films by transmission electron microscopy

(3) Li, Xiao Na a,b Nie, Dong a Dong, Chuang a

a DALIAN UNIVERSITY OF TECHNOLOGY (China)

b INSTITUTE OF GEOLOGY AND GEOPHYSICS (China)

Author keywords

Ion implantation; Metallic silicide; Semiconductor film; Transmission electron microscopy; FeSi2

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; CARBON; CRYSTALLIZATION; DOPING (ADDITIVES); ION IMPLANTATION; MICROSTRUCTURE; SEMICONDUCTING FILMS; SUBSTRATES; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY;

METAL VAPORS;

IRON COMPOUNDS;

EID: 0036644604 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(02)00664-X Document Type: Article

Times cited : (14)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.