On the role of Ge in the growth of β-FeSi2 on silicon (100) surfaces

Applied Physics Letters

Volumn 81, Issue 5, 2002, Pages 904-906

  Zenkevich, A ^a   Gaiduk, P I ^b   Gunnlaugsson, H P ^b   Weyer, G ^b  

^a NATIONAL RESEARCH NUCLEAR UNIVERSITY MEPHI   (Russian Federation)

^b AARHUS UNIVERSITY   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

GE ATOM; HIGH DENSITY; MICROGRAINS; SI SUBSTRATES; SI-GE ALLOYS; SILICIDE LAYERS; SILICON (100); SSBAUER SPECTROSCOPIES;

GERMANIUM; MOLYBDENUM; PULSED LASER DEPOSITION; SILICIDES; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79956049015     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1497185     Document Type: Article

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