Possibility of strain control in AlN layer grown by MOVPE on (0001) 6H-SiC with GaN/AlN buffer

Physica Status Solidi (A) Applied Research

Volumn 176, Issue 1, 1999, Pages 665-669

  Kurimoto, M ^a   Nakada, T ^a   Ishihara, Y ^a   Shibata, M ^a   Takano, T ^a   Yamamoto, J ^a   Honda, T ^a   Kawanishi, H ^a  

^a KOGAKUIN UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON CARBIDE; STRAIN CONTROL; SUBSTRATES; TENSILE STRESS;

ALTERNATING SOURCE FEEDING (ASF);

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0033221379     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199911)176:1<665::AID-PSSA665>3.0.CO;2-2     Document Type: Article

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