|
Volumn 449, Issue , 1997, Pages 781-786
|
Variation of GaN valence bands with biaxial stress: quantification of residual stress and impact on fundamental band parameters
a a a a a a a a a a a |
Author keywords
[No Author keywords available]
|
Indexed keywords
BAND STRUCTURE;
EPITAXIAL GROWTH;
EXCITONS;
RESIDUAL STRESSES;
SEMICONDUCTOR GROWTH;
TENSILE PROPERTIES;
THIN FILMS;
BIAXIAL STRESS;
CONDUCTION BAND;
EXCITONIC ENERGY SPLITTINGS;
REFLECTANCE SPECTRA;
VALENCE BANDS;
SEMICONDUCTING GALLIUM COMPOUNDS;
|
EID: 0030713473
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (3)
|
References (21)
|