메뉴 건너뛰기





Volumn 449, Issue , 1997, Pages 781-786

Variation of GaN valence bands with biaxial stress: quantification of residual stress and impact on fundamental band parameters

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; EPITAXIAL GROWTH; EXCITONS; RESIDUAL STRESSES; SEMICONDUCTOR GROWTH; TENSILE PROPERTIES; THIN FILMS;

EID: 0030713473     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (3)

References (21)
  • Reference 정보가 존재하지 않습니다.

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.