Growth optimization during III-nitride multiwafer MOVPE using real-time curvature, reflectance and true temperature measurements

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 202-206

  Brunner, F ^a   Hoffmann, V ^a   Knauer, A ^a   Steimetz, E ^b   Schenk, T ^b   Zettler, J T ^b   Weyers, M ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^b LayTec GmbH   (Germany)

Author keywords

A1. In situ characterization; A3. Metalorganic vapor phase epitaxy; B1. Nitrides

Indexed keywords

CHEMICAL SENSORS; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS;

GROWTH TEMPERATURE; MATERIAL COMPOSITIONS; TEMPERATURE SENSORS; WAFER SELECTIVE CURVATURES;

SEMICONDUCTOR GROWTH;

EID: 33846437481     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.186     Document Type: Article

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