Hydrogenated amorphous silicon sensor deposited on integrated circuit for radiation detection

IEEE Transactions on Nuclear Science

Volumn 55, Issue 2, 2008, Pages 802-811

  Despeisse, M ^a   Anelli, G ^a   Jarron, P ^a   Kaplon, J ^a   Moraes, D ^a   Nardulli, A ^b   Powolny, F ^a   Wyrsch, N ^c  

^a CERN   (Switzerland)

^b ETH ZURICH   (Switzerland)

^c UNIVERSITY OF NEUCHÂTEL   (Switzerland)

Author keywords

Amorphous semiconductors; CMOS analog integrated circuits; Detectors

Indexed keywords

AMORPHOUS SEMICONDUCTORS; AMORPHOUS SILICON; ANALOG CIRCUITS; CMOS INTEGRATED CIRCUITS; HYDROGENATION; SENSORS;

ANALOG INTEGRATED CIRCUITS;

RADIATION DETECTORS;

EID: 42149148669     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2008.918519     Document Type: Conference Paper

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