Characterization of 13 and 30 μm thick hydrogenated amorphous silicon diodes deposited over CMOS integrated circuits for particle detection application

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 518, Issue 1-2, 2004, Pages 357-361

  Despeisse, M ^a   Anelli, G ^a   Commichau, S ^b   Dissertori, G ^b   Garrigos, A ^a   Jarron, P ^a   Miazza, C ^c   Moraes, D ^a   Shah, A ^c   Wyrsch, N ^c   Viertel, G ^b  

^a CERN   (Switzerland)

^b ETH ZURICH   (Switzerland)

^c UNIVERSITY OF NEUCHÂTEL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; DIODES; HYDROGENATION; LEAKAGE CURRENTS; PARTICLE DETECTORS; PULSED LASER APPLICATIONS; THERMAL EFFECTS; THIN FILMS; VOLTAGE MEASUREMENT;

SILICON DIODES; TRANSIMPEDANCE AMPLIFIERS;

AMORPHOUS SILICON;

EID: 0942266478     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2003.11.022     Document Type: Conference Paper

References (4)

1. P. Jarron, G. Anelli, S. Commichau, M. Despeisse, G. Dissertori, C. Miazza, A. Shah, N. Wyrsch, G. Viertel, New concept of monolithic silicon pixel detectors: hydrogenated amorphous silicon on ASIC, presented at the 9th Pisa Meeting on Advanced Detectors, La Biodola, Isola d'Elba, Italy, May 25-31, 2003.
2. N. Wyrsch, C. Miazza, S. Dunand, A. Shah, N. Blanc, R. Kaufmann, L. Cavalier, G. Anelli, M. Despeisse, P. Jarron, D. Moraes, A.G. Sirvent, G. Dissertori, G. Viertel, Development of vertically integrated imaging and particle sensors, Presented to the Mathematics Research Society, Spring Symposium 2003, San Francisco, MRS Proceedings, to be published.
3. Anelli G., Borer K., Casagrande L., Despeisse M., Jarron P., Pelloux N., Saramad S. Nucl. Instr. and Meth. A. 512:2003;117.
4. Chevrier J.B., Equer B. J. Appl. Phys. 76(11):1994.