Radiation resistance of amorphous silicon in optoelectric properties under proton bombardment

Journal of Nuclear Materials

Volumn 258-263, Issue PART 2 B, 1998, Pages 1908-1913

  Kishimoto, N ^a   Amekura, H ^a   Kono, K ^a   Lee, C G ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CRYSTAL LATTICES; CRYSTALLINE MATERIALS; PROTON IRRADIATION; RADIATION DAMAGE; SEMICONDUCTOR MATERIALS; STIFFNESS;

OPTOELECTRIC PROPERTIES; RADIATION RESISTANCE;

SILICON;

EID: 0032179337     PISSN: 00223115     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3115(98)00149-4     Document Type: Article

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