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Volumn 76, Issue 17, 1996, Pages 3196-3199

Non-gaussian transport measurements and the einstein relation in amorphous silicon

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Indexed keywords


EID: 4243997565     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.76.3196     Document Type: Article
Times cited : (197)

References (16)
  • 10
    • 0003667043 scopus 로고
    • J. D. Joannopoulos and G. Lucovsky, Springer, New York
    • T. Tiedje, in Hydrogenated Amorphous Silicon II, J. D. Joannopoulos and G. Lucovsky (Springer, New York, 1984), pp. 261–300.
    • (1984) Hydrogenated Amorphous Silicon II , pp. 261-300
    • Tiedje, T.1
  • 12
    • 85035218184 scopus 로고
    • M. Hack, E. A. Schiff, A. Madan, M. Powell, and A. Matsuda, MRS Symposia Proceedings No. 377, Materials Research Society, Pittsburgh
    • R. Schwarz, F. Wang, S. Grebner, Q. Gu, and E. A. Schiff, in Amorphous Silicon Technology–1995, M. Hack, E. A. Schiff, A. Madan, M. Powell, and A. Matsuda, MRS Symposia Proceedings No. 377 (Materials Research Society, Pittsburgh, 1995), pp. 427–435.
    • (1995) Amorphous Silicon Technology–1995 , pp. 427-435
    • Schwarz, R.1    Wang, F.2    Grebner, S.3    Gu, Q.4    Schiff, E.A.5
  • 15
    • 0021547054 scopus 로고
    • J. I. Pankove, Academic, New York
    • A. R. Moore, in Semiconductors and Semimetals, J. I. Pankove (Academic, New York, 1984), Vol. 21C, p. 239.
    • (1984) Semiconductors and Semimetals , vol.21C , pp. 239
    • Moore, A.R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.