A novel low noise hydrogenated amorphous silicon pixel detector

Journal of Non-Crystalline Solids

Volumn 338-340, Issue 1 SPEC. ISS., 2004, Pages 729-731

  Moraes, D ^a   Anelli, G ^a   Despeisse, M ^a   Dissertori, G ^b   Garrigos, A ^a   Jarron, P ^a   Kaplon, J ^a   Miazza, C ^c   Shah, A ^c   Viertel, G M ^b   Wyrsch, N ^c  

^a CERN   (Switzerland)

^b ETH ZURICH   (Switzerland)

^c IMTNeuchâtel   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGENATION; IONIZATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SENSORS; THIN FILMS; VLSI CIRCUITS;

CHARGE COLLECTION; HIGH RATE DEPOSITION; PIXEL DETECTORS; READOUT ELECTRONICS;

AMORPHOUS SILICON;

EID: 2942567939     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2004.03.078     Document Type: Conference Paper

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