A high-speed low-noise transimpedance amplifier in a 0.25 μm CMOS technology

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 512, Issue 1-2, 2003, Pages 117-128

  Anelli, Giovanni ^a   Borer, Kurt ^b   Casagrande, Luca ^a   Despeisse, Matthieu ^a   Jarron, Pierre ^a   Pelloux, Nicolas ^a   Saramad, Shahyar ^a,c  

^a CERN   (Switzerland)

^b UNIVERSITY OF BERN   (Switzerland)

^c INSTITUTE FOR STUDIES IN THEORETICAL PHYSICS AND MATHEMATICS IPM   (Iran)

Author keywords

CMOS; Deep submicron; Low temperature CMOS; Radiation tolerance; Transimpedance amplifier

Indexed keywords

AMPLIFIERS (ELECTRONIC); CRYOGENICS; ELECTRIC IMPEDANCE; LOW TEMPERATURE EFFECTS; PROTON BEAMS; RADIATION DETECTORS;

RADIATION TOLERANCE;

CMOS INTEGRATED CIRCUITS;

EID: 0041564524     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(03)01885-0     Document Type: Conference Paper

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