Determination of diffusion length from within a confined region with the use of EBIC

IEEE Transactions on Electron Devices

Volumn 48, Issue 2, 2001, Pages 332-337

  Ong, V K S ^a   Wu, D ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRON BEAM LITHOGRAPHY; FINITE DIFFERENCE METHOD; INTERDIFFUSION (SOLIDS); MATHEMATICAL MODELS; SCANNING ELECTRON MICROSCOPY;

CARRIER DIFFUSION LENGTH; ELECTRON BEAM INDUCED CURRENT (EBIC);

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0035248908     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.902735     Document Type: Article

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