High-pass energy-filtered photoemission electron microscopy imaging of dopants in silicon

Journal of Microscopy

Volumn 230, Issue 1, 2008, Pages 42-47

  Hovorka, M ^a   Frank, L ^a   Valdaitsev, D ^b   Nepijko, S A ^b   Elmers, H S ^b   Schonhense G ^b  

^a INSTITUTE OF SCIENTIFIC INSTRUMENTS   (Czech Republic)

^b JOHANNES GUTENBERG UNIVERSITY   (Germany)

Author keywords

Dopants; Energy filtered imaging; PEEM; Silicon

Indexed keywords

ELECTRON MICROSCOPES; ELECTRON MICROSCOPY; ELECTRONS; HIGH PASS FILTERS; PHOTOEMISSION; SEMICONDUCTOR DOPING;

DOPANT CONCENTRATIONS; ENERGY; ENERGY FILTER; ENERGY-FILTERED IMAGING; HIGH-PASS; MICROSCOPY IMAGING; OPTICAL CONTRAST; PEEM; PHOTOEMISSION ELECTRON MICROSCOPY; SURFACE CONDITIONS;

SILICON;

SILICON;

ARTICLE; ELECTRON MICROSCOPY; ENERGY FILTERED TRANSMISSION ELECTRON MICROSCOPY; MATERIALS TESTING; PHOTOEMISSION ELECTRON MICROSCOPY; PRIORITY JOURNAL;

EID: 41749108867     PISSN: 00222720     EISSN: 13652818     Source Type: Journal    
DOI: 10.1111/j.1365-2818.2008.01953.x     Document Type: Article

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