Low-frequency noise and radiation response of metal-oxide-semiconductor transistors with Al 2O 3/SiO xN y/Si(100) gate stacks

Applied Physics Letters

Volumn 83, Issue 25, 2003, Pages 5232-5234

  Xiong, H D ^a   Fleetwood, D M ^a   Felix, J A ^a   Gusev, E P ^b   D'Emic, C ^b  

^a VANDERBILT UNIVERSITY   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC CHARGES; GATE STACKS;

ACOUSTIC NOISE MEASUREMENT; ALUMINUM COMPOUNDS; ANNEALING; CARRIER CONCENTRATION; CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; DOSIMETRY; ELECTRON TRAPS; FREQUENCIES; IRRADIATION; PERMITTIVITY; SILICA; SILICON WAFERS; SURFACE PHENOMENA; THICKNESS MEASUREMENT; VOLTAGE MEASUREMENT;

MOSFET DEVICES;

EID: 0942266899     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1635071     Document Type: Article

References (25)

1. M. L. Green, E. P. Gusev, R. Degrave, and E. Garfunkel, J. Appl. Phys. 90, 2057 (2001).
2. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001).
3. M. Copel, E. Cartier, E. P. Gusev, S. Guha, N. Bojarczuk, and M. Poppeller, Appl. Phys. Lett. 78, 2670 (2001).
4. S. Guha, E. Cartier, N. A. Bojarczuk, J. Bruley, L. Gignac, and J. Karasinski, J. Appl. Phys. 90, 512 (2001).
5. Y. Nemirovsky, I. Brouk, and C. G. Jakobson, IEEE Trans. Electron Devices 48, 921 (2001).
6. J. N. Burghartz, M. Hargrove, C. S. Webster, R. A. Groves, M. Keene, K. A. Jenkins, R. Logan, and E. Nowak, IEEE Trans. Electron Devices 47. 864 (2000).
7. D. M. Fleetwood, T. L. Meisenheimer, and J. H. Scofield, IEEE Trans. Electron Devices 41, 1953 (1994).
8. Z. Butler and T. Y. Hsiang, IEEE Trans. Electron Devices 35, 1651 (1988).
9. C. Surya and T. Y. Hsiang, Solid-State Electron. 31, 959 (1988).
10. M. Da Rold, E. Simoen, S. Mertens, M. Schaekers, G. Badenes, and S. Decoutere, Microelectron. Reliab. 41, 1933 (2001).
11. N. Lukyanchikova, M. Petrchuk, N. Garbar, E. Simoen, A. Mercha, C. Claeys, H. van Meer, and K. De Meyer, IEEE Trans. Electron Devices 49, 2367 (2002).
12. M. Fadlahhah, A. Szewczyk, C. Giannakopoulos, B. Cretu, F. Monsieur, T. Devoivre, J. Jomaah, and G. Ghibaudo, Microelectron. Reliab. 41, 1361 (2001).
13. E. P. Gusev, E. Cartier, D. A. Buchanan, M. A. Gribelyuk, M. Copel, H. Okorn-Schmidt, and C. D'Emic, Microelectron. Eng. 59, 341 (2001).
14. J. H. Scofield, T. P. Doerr, and D. M. Fleetwood, IEEE Trans. Nucl. Sci. 36, 1946 (1989).
15. G. Ghibaudo, O. Roux, C. Nguyen-Duc, F. Balestra, and J. Brini, Phys. Status Solidi A 124, 571 (1991).
16. D. M. Fleetwood, M. R. Shaneyfelt, and J. R. Schwank, Appl. Phys. Lett. 64, 1965 (1994).
17. P. S. Winokur, J. R. Schwank, P. J. McWhorter, P. V. Dressendorfer, and D. C. Turpin, IEEE Trans. Nucl. Sci. 31, 1453 (1984).
18. A. Y. Kang, P. M. Lenahan, and J. F. Conley, Jr., IEEE Trans. Nucl. Sci. 49, 2636 (2002).
19. J. A. Felix, D. M. Fleetwood, R. D. Schrimpf, J. G. Hong, G. Lucovsky, J. R. Schwank, and M. R. Shaneyfelt, IEEE Trans. Nucl. Sci. 49, 3191 (2002).
20. D. M. Fleetwood and J. H. Scofield, Phys. Rev. Lett. 64, 579 (1990).
21. J. M. Benedetto and H. E. Boesch, Jr., IEEE Trans. Nucl. Sci. 33, 1318 (1986).
22. M. R. Shaneyfelt, D. M. Fleetwood, J. R. Schwank, and K. L. Hughes, IEEE Trans. Nucl. Sci. 38, 1187 (1991).
23. V. V. Afanas'ev, A. Stesmans, B. J. Mrstik, and C. Zhao, Appl. Phys. Lett. 81, 1678 (2002).
24. P. M. Lenahan and P. V. Dressendorfer, J. Appl. Phys. 55, 3495 (1984).
25. W. L. Warren, M. R. Shaneyfelt, D. M. Fleetwood, J. R. Schwank, P. S. Winokur, and R. A. B. Devine, IEEE Trans. Nucl. Sci. 41, 1817 (1994).