The electronic structures of in-rich InGaN quantum well

AIP Conference Proceedings

Volumn 893, Issue , 2007, Pages 391-392

  Moon, Pilkyung ^a   Kim, Hee Jin ^a   Kwon, Soon Yong ^a   Yoon, Euijoon ^a   Park, Seoung Hwan ^b   Leburton, Jean Pierre ^c  

^a Seoul National University   (South Korea)

^b Catholic University of Daegu   (South Korea)

^c University of Illinois at Urbana Champaign

Author keywords

In rich InGaN quantum well; Kp method; Piezoelectric effect; Strain relaxation; Valence band offset

Indexed keywords

EID: 41549132682     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.2729930     Document Type: Conference Paper

References (7)

1. T. Inushima, V. V. Mamutin, V. A. Vekshin, S. V. Ivanov, T. Sakon, M. Motokawa, and S. Ohoya, J. Cryst. Growth 227-228, 481 (2001).
2. S.-Y. Kwon, M.-H. Cho, P. Moon, H. J. Kim, H. Na, H.-C. Seo, H. J. Kim, Y. Shin, D. W. Moon, Y. Sun, Y.-H. Cho, and E. Yoon, phys. stat. sol. (a) 201, No. 12, 2818 (2004).
3. Soon-Yong Kwon, Sung-Il Baik, Young-Woon Kim, Hee Jin Kim, Dong-Su Ko, Euijoon Yoon, Jung-Won Yoon, Hyeonsik Cheong, and Yoon-Soo Park, Appl. Phys. Lett. 86, 192105 (2005).
4. W. Sheng, and J.-P. Leburton, Phys. Rev. B 64, 153302 (2001).
5. S.-H. Wei and A. Zunger, Appl. Phys. Lett. 74, 1117 (1999).
6. G. A. Martin, A. Botchkarev, A. Rockett, and H. Morkoc, Appl. Phys. Lett. 68, 2541 (1996).
7. Y. F. Ng, Y. G. Cao, M. H. Xie, X. L. Wang, and S. Y. Tong, Appl. Phys. Lett. 81, 3960 (2002).