Growth of γ-In2Se3 films on Si substrates by metal-organic chemical vapor deposition with different temperatures

Journal of Crystal Growth

Volumn 310, Issue 7-9, 2008, Pages 1679-1685

  Huang, Yen Chin ^a   Li, Zhen Yu ^d   Uen, Wu Yih ^a   Lan, Shan Ming ^b   Chang, K J ^c   Xie, Zhi Jay ^a   Chang, J Y ^c   Wang, Shing Chung ^d   Shen, Ji Lin ^a  

^a CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

^b INSTITUTE OF NUCLEAR ENERGY RESEARCH   (Taiwan)

^c NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^d NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

A1. Crystal structure; A3. Metal organic chemical vapor deposition; A3. Polycrystalline deposition; B2. Semiconducting indium compounds

Indexed keywords

CRYSTAL STRUCTURE; DEPOSITION; GAMMA RAYS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS;

POLYCRYSTALLINE DEPOSITION; RHOMBOHEDRAL STRUCTURE; TRIMETHYL INDIUM (TMI);

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 41449115926     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.11.174     Document Type: Article

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