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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 2 A, 1999, Pages 668-673

Molecular beam epitaxy and characterization of layered in2Se3 films grown on slightly misoriented (001)GaAs substrates

(4) Ohtsuka, Tomohiko a Okamoto, Tamotsu a Yamada, Akira a Konagai, Makoto a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

Anisotropic properties; III VI compound semiconductors; In2Se3; Layered structure; Molecular beam epitaxy

Indexed keywords

EID: 0003347191 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.38.668 Document Type: Article

Times cited : (17)

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