Growth and characterization of In2Se3 epitaxial films by molecular beam epitaxy

Journal of Crystal Growth

Volumn 175-176, Issue PART 2, 1997, Pages 1045-1050

  Okamoto, Tamotsu ^a   Yamada, Akira ^a   Konagai, Makoto ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALLINE MATERIALS; EMISSION SPECTROSCOPY; FILM GROWTH; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMAL EFFECTS;

INDIUM SELENIDE;

SEMICONDUCTING FILMS;

EID: 0031144955     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00984-0     Document Type: Article

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