Indium selenide (In2Se3) thin film for phase-change memory

Materials Science and Engineering: B

Volumn 119, Issue 2, 2005, Pages 196-201

  Lee, Heon ^a   Kang, Dae Hwan ^b   Tran, Lung ^c  

^a Korea University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

^c HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

Ge2Sb 2Te5; In2Se3; Phase change memory (PCM); Phase change random access memory (PRAM); Phase change resistor; Pulsed mode switching; Reset; Set; Static mode switching

Indexed keywords

AMORPHIZATION; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; INDIUM COMPOUNDS; RANDOM ACCESS STORAGE; THERMODYNAMICS; THRESHOLD VOLTAGE; X RAY DIFFRACTION ANALYSIS;

GE2SB2TE5; IN2SE3 RESISTORS; PHASE-CHANGE MEMORY (PCM); PHASE-CHANGE RANDOM ACCESS MEMORY (PRAM); PHASE-CHANGE RESISTORS; PULSED MODE SWITCHING; RESET VOLTAGE; SET VOLTAGE; STATIC MODE SWITCHING; SWITCHING DYNAMIC RANGE;

THIN FILMS;

EID: 16644399041     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2005.02.060     Document Type: Article

References (12)

1. S. Lai, and T. Lowrey IEDM Tech. Dig. 2001 803
2. M. Gill, T. Lowery, J. Park, Digest of Technical papers of International Solid-State Circuits Conference, 2002, p. 202.
3. S. Lai IEDM Tech. Dig. 2003 255
4. A. Pirovano IEDM Tech. Dig. 2003 699
5. Y.N. Hwang IEDM Tech. Dig. 2003 893
6. J.H. Yi IEDM Tech. Dig. 2003
7. N. Takaura IEDM Tech. Dig. 2003
8. Y.C. Chen IEDM Tech. Dig. 2003 905
9. F. Bedeschi Symp. VLSI Circ. 2004
10. F. Pellizzer Symp. VLSI Tech. 2004
11. Y.N. Hwang Symp. VLSI Tech. 2003
12. G.P. Vassiliev J. Alloys Compd. 269 1998 107