Photoluminescence study of γ-In2Se3 epitaxial films grown by molecular beam epitaxy

Journal of Luminescence

Volumn 87, Issue , 2000, Pages 293-295

  Ohtsuka, Tomohiko ^a   Okamoto, Tamotsu ^a   Yamada, Akira ^a   Konagai, Makoto ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTRON EMISSION; ENERGY GAP; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SPECTRUM ANALYSIS; THERMAL EFFECTS;

BOUND EXCITONS; DEFECT WURTZITE STRUCTURE; EXCITON EMISSION; FREE EXCITON; INDIUM SELENIDE; SPONTANEOUS SUPERSTRUCTURE;

SEMICONDUCTING FILMS;

EID: 0033728182     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-2313(99)00319-1     Document Type: Article

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