Epitaxial growth of γ-In2Se3 films by molecular beam epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 2 A, 2001, Pages 509-512

  Ohtsuka, Tomohiko ^a   Nakanishi, Kazuyuki ^a   Okamoto, Tamotsu ^a   Yamada, Akira ^a   Konagai, Makoto ^a   Jahn, Uwe ^a,b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

Cathodoluminescence; Defect wurtzite structure; III VI compound semiconductor; Molecular beam epitaxy; Vacancy ordering

Indexed keywords

ATOMIC FORCE MICROSCOPY; CATHODOLUMINESCENCE; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SURFACE PHENOMENA; X RAY DIFFRACTION ANALYSIS;

EPITAXIAL FILMS; INDIUM SELENIDE; SPATIALLY RESOLVED CATHODOLUMINESCENCE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0035246009     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.509     Document Type: Article

References (8)