Growth of single-phase In2Se3 by using metal organic chemical vapor deposition with dual-source precursors

Applied Physics Letters

Volumn 89, Issue 18, 2006, Pages

  Chang, K J ^a   Lahn, S M ^b   Chang, J Y ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b INSTITUTE OF NUCLEAR ENERGY RESEARCH   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; THIN FILMS; X RAY DIFFRACTION;

BAND GAP; DUAL-SOURCE PRECURSORS; FLOW RATE; PHOTOLUMINESCENCE MEASUREMENTS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 33750714789     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2382742     Document Type: Article

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