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Volumn 288, Issue 1-2, 1996, Pages 14-20
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Experimental evidence of the low-temperature formation of γ-In2Se3 thin films obtained by a solid-state reaction
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Author keywords
Annealing; Crystallization; Selenides; Transmission electron microscopy
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Indexed keywords
ANNEALING;
CRYSTALLIZATION;
FILM GROWTH;
FILM PREPARATION;
LIGHT ABSORPTION;
LIGHT MEASUREMENT;
OPTICAL CORRELATION;
SEMICONDUCTING INDIUM COMPOUNDS;
THIN FILMS;
TRANSMISSION ELECTRON MICROSCOPY;
X RAY DIFFRACTION ANALYSIS;
X RAY PHOTOELECTRON SPECTROSCOPY;
INDIUM SELENIDES;
INITIAL SELENIUM INDIUM ATOMIC RATIO;
MICROPROBE ANALYSIS;
RAMAN DIFFUSION MEASUREMENT;
SELECTED AREA DIFFRACTION (SAD) PATTERNS;
SOLID STATE REACTION;
SEMICONDUCTING FILMS;
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EID: 0030289498
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/S0040-6090(96)08799-8 Document Type: Article |
Times cited : (79)
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References (28)
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