The growth of single-phase In2Se3 by using metal organic chemical vapor deposition with AlN buffer layer

Journal of Crystal Growth

Volumn 306, Issue 2, 2007, Pages 283-287

  Chang, K J ^a   Lahn, S M ^b   Xie, Z J ^c   Chang, J Y ^a   Uen, W Y ^c   Lu, T U ^d   Lin, J H ^d   Lin, T Y ^d  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b INSTITUTE OF NUCLEAR ENERGY RESEARCH   (Taiwan)

^c CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

^d NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

Author keywords

A1. Characterization; A2. Metalorganic chemical vapor deposition; B2. Indium selenide; B2. Semiconducting III VI materials

Indexed keywords

ENERGY GAP; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION;

CRYSTALLINE QUALITY; FREE EXCITON EMISSIONS; HYDROGEN SELENIDE; INDIUM SELENIDE;

THIN FILMS;

EID: 34547682073     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.05.017     Document Type: Article

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