Study of pulse laser assisted metalorganic vapor phase epitaxy of InGaN with large indium mole fraction

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 8 A, 2004, Pages

  Kangawa, Yoshihiro ^a   Kawaguchi, Norihito ^b   Hida, Ken Nosuke ^a   Kumagai, Yoshinao ^a   Koukitu, Akinori ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^b IHI CORPORATION   (Japan)

Author keywords

InGaN; Low temperature growth; Migration enhancement; MOVPE; Nd: YAG pulse laser

Indexed keywords

AMMONIA; CRYSTALLINE MATERIALS; INDIUM ALLOYS; INERT GASES; LASER BEAM EFFECTS; LASER PULSES; SURFACE PHENOMENA; THIN FILMS; ULTRAVIOLET RADIATION; X RAY DIFFRACTION ANALYSIS;

INGAN; LOW-TEMPERATURE GROWTH; MIGRATION ENHANCEMENT; ND: YAG PULSE LASERS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 5144225657     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.L1026     Document Type: Article

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