Modeling of potentials and threshold voltage for symmetric doped double-gate MOSFETs

Solid-State Electronics

Volumn 52, Issue 5, 2008, Pages 830-837

  Cerdeira, A ^a   Moldovan, O ^b   Iniguez B ^b   Estrada, M ^a  

^a DEPARTAMENTO DE FÍSICA   (Mexico)

^b UNIVERSITAT ROVIRA I VIRGILI   (Spain)

Author keywords

Doped double gate MOSFET; Double gate modeling; Double gate potentials

Indexed keywords

COMPUTER SIMULATION; CONCENTRATION (PROCESS); DOPING (ADDITIVES); ELECTRIC CURRENTS; GATE DIELECTRICS; MATHEMATICAL MODELS; THRESHOLD VOLTAGE;

DOPED DOUBLE GATE MOSFET; DOUBLE GATE MODELING; DOUBLE GATE POTENTIALS; SILICON LAYERS;

MOSFET DEVICES;

EID: 41449102638     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.10.046     Document Type: Article

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