Strain relaxation and surface migration effects in InGaAlAs and InGaAsP selective-area-grown ridge waveguides

Applied Physics Letters

Volumn 88, Issue 8, 2006, Pages

  Sirenko, A A ^a   Kazimirov, A ^b   Ougazzaden, A ^c   O'Malley, S M ^a   Bilderback, D H ^b   Cai, Z H ^d   Lai, B ^d   Huang, R ^d   Gupta, V K ^e   Chien, M ^e   Chu, S N G ^f  

^a NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

^b Department of Molecular Biology and Genetics   (United States)

^c SUPELEC   (France)

^d ARGONNE NATIONAL LABORATORY   (United States)

^e TRIQUINT SEMICONDUCTOR   (United States)

^f Multiplex Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

STRAIN RELAXATION; SYNCHROTRON RADIATION-BASED X-RAY DIFFRACTION;

OPTICAL RESOLVING POWER; SEMICONDUCTOR QUANTUM WELLS; SURFACES; SYNCHROTRON RADIATION; WAVEGUIDES;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 33644518696     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2177634     Document Type: Article

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