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Volumn 10, Issue 4-5, 2007, Pages 211-214
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Formation of low-resistance and transparent indium tin oxide ohmic contact for high-brightness GaN-based light-emitting diodes using a Sn-Ag interlayer
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Author keywords
Ag Sn alloy; GaN; Indium tin oxide; Light emitting diode; Ohmic contact
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Indexed keywords
CONTACT RESISTANCE;
LIGHT EMITTING DIODES;
OHMIC CONTACTS;
SILVER ALLOYS;
INDIUM TIN OXIDE;
INJECTION CURRENT;
INDIUM COMPOUNDS;
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EID: 40849133832
PISSN: 13698001
EISSN: None
Source Type: Journal
DOI: 10.1016/j.mssp.2007.12.001 Document Type: Article |
Times cited : (14)
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References (21)
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