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Volumn 10, Issue 4-5, 2007, Pages 211-214

Formation of low-resistance and transparent indium tin oxide ohmic contact for high-brightness GaN-based light-emitting diodes using a Sn-Ag interlayer

Author keywords

Ag Sn alloy; GaN; Indium tin oxide; Light emitting diode; Ohmic contact

Indexed keywords

CONTACT RESISTANCE; LIGHT EMITTING DIODES; OHMIC CONTACTS; SILVER ALLOYS;

EID: 40849133832     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2007.12.001     Document Type: Article
Times cited : (14)

References (21)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.