Conduction mechanism of Si single-electron transistor having a one-dimensional regular array of multiple tunnel junctions

Applied Physics Letters

Volumn 81, Issue 4, 2002, Pages 733-735

  Nakajima, Anri ^a   Ito, Yuhei ^a   Yokoyama, Shin ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONDUCTION; CONDUCTION MECHANISM; COULOMB BLOCKADE EFFECTS; LOW TEMPERATURES; MULTIPLE TUNNEL JUNCTIONS; PARASITIC CAPACITANCE; REGULAR ARRAY; SINGLE ELECTRON; SINGLE SOLITON;

CURRENT VOLTAGE CHARACTERISTICS; MAGNETIC DEVICES; SOLITONS; TUNNEL JUNCTIONS;

SINGLE ELECTRON TRANSISTORS;

EID: 79956000266     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1492318     Document Type: Article

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