메뉴 건너뛰기




Volumn 29, Issue 1, 2008, Pages 139-143

Study on the properties of ZnO films prepared by photo-assisted MOCVD

Author keywords

Optical property; Photo assisted MOCVD; ZnO thin film

Indexed keywords


EID: 40749136661     PISSN: 10007032     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (8)

References (24)
  • 1
    • 0032606197 scopus 로고    scopus 로고
    • Residual native shallow donor in ZnO [J]
    • Look D C, Hemsky J W, Sizelove J R. Residual native shallow donor in ZnO [J]. Phys. Rev. Lett., 1999, 82(12) : 2552-2555.
    • (1999) Phys. Rev. Lett , vol.82 , Issue.12 , pp. 2552-2555
    • Look, D.C.1    Hemsky, J.W.2    Sizelove, J.R.3
  • 2
    • 25144462707 scopus 로고    scopus 로고
    • A comprehensive review of ZnO materials and devices [J]
    • 041301-1-103
    • Özgür Ü, Alivov Ya I, Liu C, et al. A comprehensive review of ZnO materials and devices [J]. J. Appl. Phys., 2005, 98(4) :041301-1-103.
    • (2005) J. Appl. Phys , vol.98 , Issue.4
    • Özgür, U.1    Alivov, Y.I.2    Liu, C.3
  • 3
    • 0035911611 scopus 로고    scopus 로고
    • Experimental confirmation of the predicted shallow donor hydrogen state in zinc oxide [J]
    • Cox S F J, Davis E A, Cottrell S P, et al. Experimental confirmation of the predicted shallow donor hydrogen state in zinc oxide [J]. Phys. Rev. Lett., 2001, 86(12) :2601-2604.
    • (2001) Phys. Rev. Lett , vol.86 , Issue.12 , pp. 2601-2604
    • Cox, S.F.J.1    Davis, E.A.2    Cottrell, S.P.3
  • 5
    • 19944421735 scopus 로고    scopus 로고
    • Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO [J]
    • Tsukazaki A, Kubota M, Takeyshi O. Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO [J]. Nat. Mater., 2005, 4(1) :42-46.
    • (2005) Nat. Mater , vol.4 , Issue.1 , pp. 42-46
    • Tsukazaki, A.1    Kubota, M.2    Takeyshi, O.3
  • 6
    • 33644694894 scopus 로고    scopus 로고
    • Blue-yellow ZnO homostructural light-emitting diode realized by metalorganic chemical vapor deposition technique [J]
    • 092101-1-3
    • Liu W, Gu S L, Ye J D, et al. Blue-yellow ZnO homostructural light-emitting diode realized by metalorganic chemical vapor deposition technique [J]. Appl. Phys. Lett. 2006, 88(9) :092101-1-3.
    • (2006) Appl. Phys. Lett , vol.88 , Issue.9
    • Liu, W.1    Gu, S.L.2    Ye, J.D.3
  • 7
    • 33947597462 scopus 로고    scopus 로고
    • Realization of ultraviolet electroluminescence from ZnO homojunction with n-ZnO/p-ZnO: As/GaAs structure [J]
    • 121128-1-3
    • Sun J C, Zhao J Z, Lang H W, et al. Realization of ultraviolet electroluminescence from ZnO homojunction with n-ZnO/p-ZnO: As/GaAs structure [J]. Appl. Phys. Lett. 2007, 90(12) :121128-1-3.
    • (2007) Appl. Phys. Lett , vol.90 , Issue.12
    • Sun, J.C.1    Zhao, J.Z.2    Lang, H.W.3
  • 8
    • 33748486928 scopus 로고    scopus 로고
    • Room temperature defect related electroluminescence from ZnO homojunctions grown by ultrasonic spray pyrolysis [J]
    • 052113-1-3
    • Du G T, Liu W F, Bian J M, et al. Room temperature defect related electroluminescence from ZnO homojunctions grown by ultrasonic spray pyrolysis [J]. Appl. Phys. Lett. 2006, 89(5) :052113-1-3.
    • (2006) Appl. Phys. Lett , vol.89 , Issue.5
    • Du, G.T.1    Liu, W.F.2    Bian, J.M.3
  • 9
    • 40749154349 scopus 로고    scopus 로고
    • n-ZnO/i-MgO/p-GaN heterojunction light-emitting diodes [J]
    • in Chinese
    • Jiao Shujie, Lu Youming, Shen Dezhen, et al. n-ZnO/i-MgO/p-GaN heterojunction light-emitting diodes [J]. Chin. J. Lumin. 2006, 27(4) :499-502 (in Chinese).
    • (2006) Chin. J. Lumin , vol.27 , Issue.4 , pp. 499-502
    • Shujie, J.1    Lu, Y.2    Shen, D.3
  • 10
    • 40749101493 scopus 로고    scopus 로고
    • 2 doping [J]
    • in Chinese
    • 2 doping [J]. Chin. J. Lumin. 2006, 27(6) :1026-1028 (in Chinese).
    • (2006) Chin. J. Lumin , vol.27 , Issue.6 , pp. 1026-1028
    • Zhang, Z.1    Wei, Z.2    Lu, Y.3
  • 11
    • 0033717519 scopus 로고    scopus 로고
    • Synthesis of p-type ZnO films [J]
    • Ryu Y R, Zhu S, Look D C, et al. Synthesis of p-type ZnO films [J]. J. Cryst. Growth, 2000, 216(1-4) :330-334.
    • (2000) J. Cryst. Growth , vol.216 , Issue.1-4 , pp. 330-334
    • Ryu, Y.R.1    Zhu, S.2    Look, D.C.3
  • 12
    • 79956010497 scopus 로고    scopus 로고
    • Control of p- and n-type conductivity in sputter deposition of undoped ZnO [J]
    • Xiong G, Wilkinson J, Mischuck B, et al. Control of p- and n-type conductivity in sputter deposition of undoped ZnO [J]. Appl. Phys. Lett., 2002, 80(7):1195-1197.
    • (2002) Appl. Phys. Lett , vol.80 , Issue.7 , pp. 1195-1197
    • Xiong, G.1    Wilkinson, J.2    Mischuck, B.3
  • 13
    • 0038200649 scopus 로고    scopus 로고
    • 3 -doped ZnO thin films on oriented sapphire substrates [J]
    • 3 -doped ZnO thin films on oriented sapphire substrates [J]. J. Cryst. Growth, 2003, 255(3-4) :293-297.
    • (2003) J. Cryst. Growth , vol.255 , Issue.3-4 , pp. 293-297
    • Wang, J.Z.1    Du, G.T.2    Zhao, B.J.3
  • 14
    • 1242285028 scopus 로고    scopus 로고
    • Deposition and electrical properties of N-In codoped p - type ZnO films by ultrasonic spray pyrolysis [J]
    • Bian J M, Li X M, Gao X D, et al. Deposition and electrical properties of N-In codoped p - type ZnO films by ultrasonic spray pyrolysis [J]. Appl. Phys. Lett. 2004, 84(4) :541-543.
    • (2004) Appl. Phys. Lett , vol.84 , Issue.4 , pp. 541-543
    • Bian, J.M.1    Li, X.M.2    Gao, X.D.3
  • 15
    • 33645165558 scopus 로고    scopus 로고
    • p-type behavior from Sb-doped ZnO heterojunction photodiodes [J]
    • 112108-1-3
    • Mandalapu L J, Xiu F X, Yang Z, et al. p-type behavior from Sb-doped ZnO heterojunction photodiodes [J]. Appl. Phys. Lett., 2006, 88(11) :112108-1-3.
    • (2006) Appl. Phys. Lett , vol.88 , Issue.11
    • Mandalapu, L.J.1    Xiu, F.X.2    Yang, Z.3
  • 16
    • 31944446414 scopus 로고    scopus 로고
    • Xiu F X, Yang Z, Mandalapu L J, et al. p-type ZnO films with solid-source phosphorus doping by molecular-beam epitaxy [J]. Appl. Phys. Lett., 2006, 88(5):052106-1-3.
    • Xiu F X, Yang Z, Mandalapu L J, et al. p-type ZnO films with solid-source phosphorus doping by molecular-beam epitaxy [J]. Appl. Phys. Lett., 2006, 88(5):052106-1-3.
  • 17
    • 0026373818 scopus 로고
    • A defect model for photoirradiated semiconductors - suppression of the self-compensation in II - IV materials [J]
    • Materials M, Wada T, Fujita Sz, et al. A defect model for photoirradiated semiconductors - suppression of the self-compensation in II - IV materials [J]. Jpn. J. Appl. Phys., 1991, 30(12A) :3475-3481.
    • (1991) Jpn. J. Appl. Phys , vol.30 , Issue.12 A , pp. 3475-3481
    • Materials, M.1    Wada, T.2    Fujita, S.3
  • 18
    • 0030197037 scopus 로고    scopus 로고
    • Growth of nitrogen-doped ZnSe by photoassisted metalorganic chemical vapor deposition [J]
    • Fujita Y, Terada T, Fujii S. Growth of nitrogen-doped ZnSe by photoassisted metalorganic chemical vapor deposition [J]. Jpn. J. Appl. Phys., 1996, 35(7B):L923-L925.
    • (1996) Jpn. J. Appl. Phys , vol.35 , Issue.7 B
    • Fujita, Y.1    Terada, T.2    Fujii, S.3
  • 19
    • 0025263107 scopus 로고
    • Photo-MOCVD of ZnO epitaxial films [J]
    • Shimizu M, Katayama T, Shiusaki T, et al. Photo-MOCVD of ZnO epitaxial films [J]. J. Cryst. Growth, 1990, 99(1-4): 399-402.
    • (1990) J. Cryst. Growth , vol.99 , Issue.1-4 , pp. 399-402
    • Shimizu, M.1    Katayama, T.2    Shiusaki, T.3
  • 20
    • 51249166963 scopus 로고
    • Publications: Integrated photonic devices and materials group [J]
    • HO E, Coronado C A, Kolodziejski L A, et al. Publications: integrated photonic devices and materials group [J]. J. Elec. Material, 1993, 22(5) :473-478.
    • (1993) J. Elec. Material , vol.22 , Issue.5 , pp. 473-478
    • HO, E.1    Coronado, C.A.2    Kolodziejski, L.A.3
  • 21
    • 0030196492 scopus 로고    scopus 로고
    • Low-temperature growth of ZnS by photoassisted metalorganic chemical vapor deposition [J]
    • Fujita Y. Low-temperature growth of ZnS by photoassisted metalorganic chemical vapor deposition [J]. Jpn. J. Appl. Phys., 1996, 35(7B):L919-L922.
    • (1996) Jpn. J. Appl. Phys , vol.35 , Issue.7 B
    • Fujita, Y.1
  • 22
    • 18244430368 scopus 로고    scopus 로고
    • Hydrogen as a cause of doping in zinc oxide [J]
    • Walle C G Van de. Hydrogen as a cause of doping in zinc oxide [J]. Phys. Rev. Lett., 2000, 85(5) :1012-1015.
    • (2000) Phys. Rev. Lett , vol.85 , Issue.5 , pp. 1012-1015
    • Walle, C.1    Van de, G.2
  • 23
    • 0035670824 scopus 로고    scopus 로고
    • G Van de. Defect analysis and engineering in ZnO [J
    • Walle Chris G Van de. Defect analysis and engineering in ZnO [J]. Phys. B: Condensed Matter, 2001, 308-310: 899-903.
    • (2001) Phys. B: Condensed Matter , vol.308-310 , pp. 899-903
    • Chris, W.1
  • 24
    • 0030562384 scopus 로고    scopus 로고
    • Effects of annealing atmosphere and temperature on acceptor activation in ZnSe: N grown by photoassisted MOVPE [J]
    • Ogata K I, Kawaguchi D, Kera T, et al. Effects of annealing atmosphere and temperature on acceptor activation in ZnSe: N grown by photoassisted MOVPE [J]. J. Cryst. Growth, 1996, 159(1-4) :312-316.
    • (1996) J. Cryst. Growth , vol.159 , Issue.1-4 , pp. 312-316
    • Ogata, K.I.1    Kawaguchi, D.2    Kera, T.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.