Thin amorphous Si/S3N4 - Based light-emitting device prepared with low thermal budget

IEEE Electron Device Letters

Volumn 29, Issue 3, 2008, Pages 228-231

  Tan, W K ^a   Yu, M B ^a   Chen, Q ^a   Loh, W Y ^a   Ye, J D ^a   Zhang, X H ^b   Lo, G Q ^a   Kwong, D L ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

Si SiN multilayer stack; Electroluminescence (EL); Light emitting; Photoluminescence (PL)

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; CMOS INTEGRATED CIRCUITS; ELECTROLUMINESCENCE; MULTILAYERS; PHOTOLUMINESCENCE; SILICON; SILICON NITRIDE;

CARRIER INJECTION MECHANISM; FRENKEL-POOLE TUNNELING;

LIGHT SOURCES;

EID: 40749112817     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.915379     Document Type: Article

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