Effects of surface treatment on the velocity-field characteristics of AlGaN/GaN heterostructures

Semiconductor Science and Technology

Volumn 19, Issue 4 SPEC. ISS., 2004, Pages

  Barker, J M ^a   Ferry, D K ^a   Goodnick, S M ^a   Koleske, D D ^b   Allerman, A ^b   Shul, R J ^b  

^a Arizona State University   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CURRENT DENSITY; ELECTRIC CONDUCTIVITY; GALLIUM NITRIDE; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PASSIVATION; SCANNING ELECTRON MICROSCOPY; SILICON NITRIDE; SURFACE TREATMENT; VELOCITY MEASUREMENT;

DISPLACEMENT CURRENTS; PLASMA TREATMENT;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 1942484268     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/4/157     Document Type: Conference Paper

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